1 c xxx rt200-sxxxx chip diagram features ? thin 95 m chip ? reduced forward voltage C 3.0 v typical at 5 ma ? razerthin led performance C 460 nm - 10 mw min. C 470 nm - 8 mw min. C 527 nm - 2 mw min. ? single wire bond structure ? class 2 esd rating applications ? mobile phone key pads C white leds C blue leds C green leds ? cellular phone lcd backlighting ? automotive dashboard lighting ? led video displays ? audio product display lighting cree ? razerthin ? gen 3 leds c xxx rt200-sxxxx data sheet crees razerthin leds are a new generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary g?sic ? substrate to deliver superior price/performance for high-intensity blue and green leds. these vertically structured led chips are approximately 95 microns in height and require a low forward voltage. crees razerthin series chips have the ability to withstand 1000 v esd. d a t a s h e e t : c p r 3 d s r e v . - top view bottom view g?sic led chip 200 x 200 m t = 95 m backside metallization gold bond pad 112 m diameter die cross section cathode (-) anode (+) 90 m square 170 x 170 m subject to change without notice. www.cree.com
2 maximum ratings at t a = 25c notes 1&3 c xxx rt200-sxxxx dc forward current 30 ma peak forward current (1/10 duty cycle @ 1khz) 100 ma led junction temperature 125c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +100c electrostatic discharge threshold (hbm) note 2 1000 v electrostatic discharge classifcation (mil-std-883e) note 2 class 2 typical electrical/optical characteristics at t a = 25c, i f = 5 ma note 3 part number forward voltage (v f , v) reverse current [i(vr=5v), a] full width half max. ( d , nm) min. typ. max. max. typ. c460rt200-sxxxx 2.7 3.0 3.3 1 24 c470rt200-sxxxx 2.7 3.0 3.3 1 25 c527rt200-sxxxx 2.7 3.1 3.4 1 40 mechanical specifcations c xxx rt200-sxxxx description dimension tolerance p-n junction area (m) 150 x 150 35 top area (m) 200 x 200 35 bottom area (m) 170 x 170 35 chip thickness (m) 95 15 au bond pad diameter (m) 112 20 au bond pad thickness (m) 1.0 0.5 back contact metal width (m) 90 10 notes: 1. maximum ratings are package dependent. the above ratings were determined using a t-1 3/4 package (with hysol os4000 epoxy) for characterization. seller makes no representations regarding ratings for packages other than the t-1 3/4 package used by seller. the forward currents (dc and peak) are not limited by the g?sic die but by the effect of the led junction temperature on the package. the junction temperature limit of 125c is a limit of the t-1 3/4 package; junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). 2. product resistance to electrostatic discharge (esd) is measured by simulating esd using a rapid avalanche energy test (raet). the raet procedures are designed to approximate the maximum esd ratings shown. seller gives no other assurances regarding the ability of products to withstand esd. 3. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 5 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are the average values expected by seller in large quantities and are provided for information only. seller gives no assurances products shipped will exhibit such typical ratings. all measurements were made using lamps in t-1 3/4 packages (with hysol os4000 epoxy). dominant wavelength measurements taken using illuminance e. 4. specifcations are subject to change without notice. copyright ? 2008 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, g?sic and razerthin are registered trademarks of cree, inc. cpr3ds rev. - cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1-919-313-5300 fax: +1-919-313-5870 www.cree.com/chips
3 standard bins for c xxx rt200-s xx 000 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx rt200-s xx 000) orders may be flled with any or all bins (c xxx rt200-x xxx ) contained in the kit. all radiant fux values shown and specifed are at i f = 20 ma and dominant wavelength values are at i f = 5 ma. c460rt200-s1000 c460rt200-0309 c460rt200-0310 c460rt200-0311 c460rt200-0312 c460rt200-0305 c460rt200-0306 c460rt200-0307 c460rt200-0308 c460rt200-0301 c460rt200-0302 c460rt200-0303 c460rt200-0304 14.0 mw 12.0 mw 10.0 mw dominant wavelength radiant flux 457.5 nm 460 nm 462.5 nm 455 nm 465 nm c460rt200-s1200 c460rt200-0309 c460rt200-0310 c460rt200-0311 c460rt200-0312 c460rt200-0305 c460rt200-0306 c460rt200-0307 c460rt200-0308 14.0 mw 12.0 mw dominant wavelength radiant flux 457.5 nm 460 nm 462.5 nm 455 nm 465 nm copyright ? 2008 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, g?sic and razerthin are registered trademarks of cree, inc. cpr3ds rev. - cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1-919-313-5300 fax: +1-919-313-5870 www.cree.com/chips
4 standard bins for c xxx rt200-s xx 000 (continued) c470rt200-s1000 c470rt200-0313 c470rt200-0314 c470rt200-0315 c470rt200-0316 c470rt200-0309 c470rt200-0310 c470rt200-0311 c470rt200-0312 c470rt200-0305 c470rt200-0306 c470rt200-0307 c470rt200-0308 14.0 mw 12.0 mw 10.0 mw dominant wavelength radiant flux 467.5 nm 470 nm 472.5 nm 465 nm 475 nm c470rt200-s1200 c470rt200-0313 c470rt200-0314 c470rt200-0315 c470rt200-0316 c470rt200-0309 c470rt200-0310 c470rt200-0311 c470rt200-0312 14.0 mw 12.0 mw dominant wavelength radiant flux 467.5 nm 470 nm 472.5 nm 465 nm 475 nm c470rt200-s0800 c470rt200-0313 c470rt200-0314 c470rt200-0315 c470rt200-0316 c470rt200-0309 c470rt200-0310 c470rt200-0311 c470rt200-0312 c470rt200-0305 c470rt200-0306 c470rt200-0307 c470rt200-0308 c470rt200-0301 c470rt200-0302 c470rt200-0303 c470rt200-0304 14.0 mw 12.0 mw 10.0 mw 8.0 mw dominant wavelength radiant flux 467.5 nm 470 nm 472.5 nm 465 nm 475 nm copyright ? 2008 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, g?sic and razerthin are registered trademarks of cree, inc. cpr3ds rev. - cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1-919-313-5300 fax: +1-919-313-5870 www.cree.com/chips
5 standard bins for c xxx rt200-s xx 000 (continued) c527rt200-s0300 c527rt200-0310 c527rt200-0311 c527rt200-0312 c527rt200-0307 c527rt200-0308 c527rt200-0309 c527rt200-0304 c527rt200-0305 c527rt200-0306 5.0 mw 4.0 mw 3.0 mw dominant wavelength radiant flux 525 nm 530 nm 535 nm 520 nm c527rt200-s0400 c527rt200-0310 c527rt200-0311 c527rt200-0312 c527rt200-0307 c527rt200-0308 c527rt200-0309 5.0 mw 4.0 mw dominant wavelength radiant flux 525 nm 530 nm 535 nm 520 nm C527RT200-S0200 c527rt200-0310 c527rt200-0311 c527rt200-0312 c527rt200-0307 c527rt200-0308 c527rt200-0309 c527rt200-0304 c527rt200-0305 c527rt200-0306 c527rt200-0301 c527rt200-0302 c527rt200-0303 5.0 mw 4.0 mw 3.0 mw 2.0 mw dominant wavelength radiant flux 525 nm 530 nm 535 nm 520 nm copyright ? 2008 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, g?sic and razerthin are registered trademarks of cree, inc. cpr3ds rev. - cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1-919-313-5300 fax: +1-919-313-5870 www.cree.com/chips
6 characteristic curves these are representative measurements for the razerthin products. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. copyright ? 2008 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, g?sic and razerthin are registered trademarks of cree, inc. cpr3ds rev. - cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1-919-313-5300 fax: +1-919-313-5870 www.cree.com/chips
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